New Linear Power Amplifier from NXP Provides Flexibility for Thermally Sensitive Designs
NXP Semiconductors today introduced the MMZ25332B4 InGaP HBT linear amplifier. The device is housed in a 4 mm x 4 mm QFN package that can be used on thicker printed circuit boards (PCB), particularly where thermal sensitivity is high. The MMZ25332B4 is a 2 W, two-stage, wideband linear amplifier designed for small cell, W-CDMA and LTE base station applications. It operates at 1500 – 2700 MHz from a supply voltage of 3-5 volts.
Since the device has partial internal matching, customers can reduce external matching components in their designs. Bias current may be adjusted by varying the values of the external bias resistors. The device also provides exceptional linearity, with a typical output power performance in LTE mode of 22.5 dBm with adjacent channel leakage ratio of -48 dBc.
The MMZ25332B4 can handle an RF input overdrive up to 30 dBm and has a human body model ESD rating of Class 2.
Application design tools available
To accelerate new design development, application tools are available for a range of application frequencies and include full characterization and design information in an evaluation kit. A .dxf file may be downloaded from NXP’s web for a printed circuit board design. www.nxp.com/MMZ25332B4.
