Latest additions ensure Nexperia retains the industry’s broadest GaN FET offering
Nexperia today announced the addition of 12 new devices to its continuously expanding e-mode GaN FET portfolio. This latest release is intended to address the growing demand for higher efficiency and more compact systems. The new low and high-voltage e-mode GaN FETs address multiple markets including consumer, industrial, server/computing and telecommunications, with a particular focus on supporting high-voltage, low to mid-power and low-voltage, low to high-power use cases. Since introducing e-mode GaN FETs in 2023, Nexperia remains the only supplier in the industry to offer both cascode or d-mode and e-mode devices, providing designers with convenience when faced with variable challenges during the design process.
The latest additions to Nexperia’s e-mode GaN FET portfolio include new low voltage 40 V bi-directional devices (RDSon<12 mΩ) to support overvoltage protection (OVP), load switching, and low-voltage applications including battery management systems (BMS) in mobile devices, and laptop computers. Also featuring in this release are 100 V and 150 V devices (RDSon<7 mΩ) suitable for synchronous rectification (SR) power supplies in consumer devices, DC-DC converters in datacomms and telecoms equipment, photovoltaic micro-inverters, Class-D audio amplifiers and motor control systems in e-bikes, forklifts and light electric vehicles (LEVs). The new higher voltage range features 700 V devices (RDSon>140 mΩ) to support LED drivers and power factor correction (PFC) applications, and 650 V devices (RDSon>350 mΩ) suitable for use in AC/DC converters.
The superior switching performance of Nexperia’s e-mode GaN FET technology is due to their exceptionally low QG and QOSS values. These new devices offer industry-leading figures of merit (FOM), making them a top choice for high-efficiency power solutions.
To learn more about Nexperia’s latest e-mode GaN FETs, visit: nexperia.com/gan-fets
Credit: Nexperia
