TOKYO– Toshiba Corporation’s (TOKYO: 6502) Storage & Electronic Devices Solutions Company today announced the launch of “TB9150FNG,” an opto-isolated IGBT *1 gate pre-driver IC with various enhanced protective functions for the in-vehicle inverters of electric and hybrid vehicles.
Sample shipments start today, with mass production scheduled to start in 2018. The IC will be showcased at “TECHNO-FRONTIER 2016” to be held from 20 to 22 April at Makuhari Messe in Chiba, Japan.
Inverter control is used to drive the motors of electric and hybrid vehicles efficiently. As the control and drive functions have different operating voltages, they must be isolated from each other, which is secured with a device like a photocoupler. This solution results in loud noise from the drive circuit. Another concern is that efficient IGBT driving requires small, versatile, high performance IGBT gate pre-driver ICs with built-in protective functions.
Toshiba “TB9150FNG” integrates a photocoupler that secures high-level isolation characteristic between control (the primary side) and drive (the secondary side). It incorporates a highly-precise IGBT temperature detection function, a flyback transformer controller and a short circuit detection function (current sense and DESAT *2 monitor) that all contribute to system downsizing.
Performance can be optimized by monitoring the IGBT’s operating temperature with the high accuracy IGBT temperature detection function, contributing both to downsizing of the IGBT and improved fuel consumption by electric and hybrid vehicles.
| Part number | TB9150FNG |
|---|---|
| Mass production start timing | 2018 |
| Mass production quantity | 3.5 million pcs/year |
| Number of channels | Incorporates various abnormal detection circuits (2 channels) when driving 2 IGBTs in parallel. |
| Operating power supply range | + 6 to 20V, 28V(1 hour) |
| Operating temperature range | – 40 to 125oC |
| Input signal | Compatible with SPI control |
| Abnormality Detection Circuit | High voltage/low voltage detection; short-circuit detection; IGBT temperature detection; die overheat detection |
| Isolation performance | The primary and secondary sides are perfectly electrically isolated by an optically coupled device (photocoupler). Isolation voltage: 2500Vrms (AC, 1 minute) |
| Package | SSOP48-0813-0.5 (10.4mm × 12.5mm × 2.0mm) |
*1: Insulated Gate Bipolar Transistor: A bipolar transistor that incorporates a MOSFET into a gate. Used for electric power control.
*2: DESAT: desaturation.
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