, Silicon Storage Technology Announces Availability of its Smartbit® OTP NVM Technology on Altis Semiconductor’s 130 nm and 180 nm RF CMOS Platform

Silicon Storage Technology Announces Availability of its Smartbit® OTP NVM Technology on Altis Semiconductor’s 130 nm and 180 nm RF CMOS Platform

SST’s One-Time-Programmable (OTP) Antifuse NVM Technology Offers Industry-leading Fast-read Capability and Smartbit™ Dynamic Programming for High Reliability

 “SST’s Smartbit OTP technology provides SoC designers with an extremely high reliability solution,” said Vipin Tiwari, director of marketing and business development at SST. “Since our engagement began over two years ago, Altis Semiconductor has been working with us to support our mutual customers with SST’s unique Smartbit technology on both 130 nm and 180 nm nodes. We are excited about the opportunity to offer a competitive platform to our mutual customers.”

SST’s SmartBit OTP solution significantly reduces production costs by implementing a high density antifuse technology in standard logic CMOS without additional process steps. The Smartbit bit cell design and unique dynamic-programming technology maximize both device reliability and pro­gramming yield while offering faster programming and access time than other OTP technologies.

“Altis Semiconductor recognizes the need for highly reliable OTP memory in a small footprint,” said Delphine Knaak, senior marketing manager for IT and partnership at Altis Semiconductor. “Our collaboration with SST has resulted in automotive qualified, Smartbit-based antifuse OTP technology that is already in production with leading international clients.”

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